EFFECT OF ZINC IMPURITY-INDUCED DISORDERING ON THE REFRACTIVE-INDEX OF GAAS/ALGAAS MULTIQUANTUM WELLS

被引：6
|
作者：
HAN, SK
SINHA, S
RAMASWAMY, RV
机构：
[1] Photonics Research Laboratory, Department of Electrical Engineering, University of Florida, Gainesville
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期
关键词：
D O I：
10.1063/1.111030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the variation of the refractive index of a GaAs/AlGaAs multiquantum well of well width 6.5 nm and barrier width 19 nm, introduced by zinc impurity-induced disordering. We employ a structure consisting of several uncoupled, multiquantum well ridge waveguides with tapered disordering across the transverse direction. The refractive index changes have been deduced as a function of the interdiffusion length of Ga/Al by the use of an interference technique. We measured a maximum index change of 0.083 and 0.062 for significant disordering (L(d)=6.6 nm) at 35 and 100 meV below the band edge of the undisordered multiquantum well, respectively.
引用
收藏
页码：760 / 762
页数：3
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