CHARACTERIZATION OF POLYCRYSTALLINE DIAMOND THIN-FILMS GROWN ON VARIOUS SUBSTRATES

被引：25

作者：

RAMESHAM, R ^{[1
]}

ROPPEL, T ^{[1
]}

JOHNSON, RW ^{[1
]}

CHANG, JM ^{[1
]}

机构：

[1] UNIV ALABAMA,DEPT CHEM,HUNTSVILLE,AL 35899

来源：

THIN SOLID FILMS | 1992年 / 212卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90505-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline diamond thin films have been selectively grown on various substrates such as silicon, silicon nitride, silicon dioxide, alumina, molybdenum, and boron nitride. This has been achieved by selectively damaging the substrate by an ultrasonic agitation process using diamond particles (typical size approximately 90-mu-m) in methanol. Microwave plasma-assisted chemical vapor deposition is used to grow diamond thin films using a gas mixture of hydrogen and methane. The films were analyzed for morphology by scanning electron microscopy, chemical nature by Raman spectroscopy, and adhesion strength by z-axis pull stud testing. Films grown on boron nitride were characterized by X-ray diffraction.

引用

页码：96 / 103

页数：8

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