BAND-GAP SHIFTS IN HEAVILY PARA-TYPE DOPED SEMICONDUCTORS OF THE ZINCBLENDE AND DIAMOND TYPE

被引：73
|
作者：
SERNELIUS, BE
机构：
[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831
[2] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37916
来源：
PHYSICAL REVIEW B | 1986年 / 34卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.34.5610
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5610 / 5620
页数：11
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