BAND-GAP SHIFTS IN HEAVILY PARA-TYPE DOPED SEMICONDUCTORS OF THE ZINCBLENDE AND DIAMOND TYPE

被引：73

|

作者：

SERNELIUS, BE

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37916

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.5610

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5610 / 5620

页数：11

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