NONEQUILIBRIUM BEHAVIOR OF CHARGED POINT-DEFECTS DURING PHOSPHORUS DIFFUSION IN SILICON

被引：24
|
作者：
RICHARDSON, WB
MULVANEY, BJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期
关键词：
D O I：
10.1063/1.342836
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2243 / 2247
页数：5
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