NONEQUILIBRIUM BEHAVIOR OF CHARGED POINT-DEFECTS DURING PHOSPHORUS DIFFUSION IN SILICON

被引：24

|

作者：

RICHARDSON, WB

MULVANEY, BJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2243 / 2247

页数：5

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