共 41 条
- [31] Characterization of n-type layers formed in (11-20)-4H-SiC by phosphorus ion implantation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 203 - 207
- [32] SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO SILICON PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (23): : 43 - 45
- [33] Composition and microstructure of titanium nitride formed on Ti6Al4V by nitrogen plasma immersion ion implantation Surface and Coatings Technology, 1998, 100-101 (1-3): : 366 - 371
- [34] Composition and microstructure of titanium nitride formed on Ti6Al4V by nitrogen plasma immersion ion implantation SURFACE & COATINGS TECHNOLOGY, 1998, 100 (1-3): : 366 - 371
- [36] Raman spectroscopy on the β-C3N4 structure formed by low-energy nitrogen ion implantation into a diamond surface PHYSICAL REVIEW B, 1999, 59 (20): : 13347 - 13349
- [37] Microstructures of poly(2-methoxy-5-octyloxy)-1, 4-phenylene vinylene films modified by nitrogen ion implantation Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2008, 28 (03): : 248 - 251
- [39] Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films Semiconductors, 2016, 50 : 920 - 923