共 50 条
- [41] INFLUENCE OF PREPARATORY SURFACE TREATMENT OF GALLIUM ARSENIDE SUBSTRATES ON PERFECTION OF AUTOEPITAXIAL LAYERS GROWING ON THEM SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1967, 12 (02): : 286 - +
- [45] A NEW EXPLANATION FOR THE DEPENDENCE OF THE PINNING POSITION OF THE FERMI LEVEL ON THE COMPOSITION OF GAAS(100) SURFACE CHINESE PHYSICS, 1988, 8 (04): : 1102 - 1108
- [48] INFLUENCE OF LITHIUM INTERCALATION ON THE POSITION OF THE FERMI LEVEL AND THE DENSITY OF FREE-CARRIERS IN BISMUTH TELLURIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1289 - 1290
- [49] Surface relaxation and its influence on the fermi level pinning of Zn/GaAs(110) Wuli Xuebao/Acta Physica Sinica, 46 (01): : 121 - 122
- [50] Unveiling the Influence of Surface Fermi Level Pinning on the Piezoelectric Response of Semiconducting Nanowires ADVANCED ELECTRONIC MATERIALS, 2018, 4 (01):