INFRARED PROPERTIES OF HEXAGONAL SILICON CARBIDE

被引：428
|
作者：
SPITZER, WG
KLEINMAN, D
WALSH, D
机构：
来源：
PHYSICAL REVIEW | 1959年 / 113卷 / 01期
关键词：
D O I：
10.1103/PhysRev.113.127
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：127 / 132
页数：6
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