MECHANISMS OF DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

The effect of implantation conditions on structure and defect formation in high-dose oxygen-implanted silicon was studied by conventional and high resolution electron microscopy. The microstructure produced in material implanted at medium current at low temperature (350-550-degrees-C) includes short stacking faults formed near the surface which, upon annealing, grew into stable defects with a density of 10(9) cm-2. The microstructure produced in samples implanted at a high current and at a higher temperature (600-degrees-C) shows much longer, multiply faulted defects only above the buried oxide interface which, upon annealing, are eliminated, resulting in a defect density of only 10(5) cm-2. The mechanisms of defect formation and evolution are discussed.