MECHANISMS OF DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

被引：0

作者：

VISITSERNGTRAKUL, S

JUNG, CO

RAVI, TS

CORDTS, B

BURKE, DE

KRAUSE, SJ

机构：

[1] IBIS TECHNOL CORP, DANVERS, MA 01923 USA

[2] UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of implantation conditions on structure and defect formation in high-dose oxygen-implanted silicon was studied by conventional and high resolution electron microscopy. The microstructure produced in material implanted at medium current at low temperature (350-550-degrees-C) includes short stacking faults formed near the surface which, upon annealing, grew into stable defects with a density of 10(9) cm-2. The microstructure produced in samples implanted at a high current and at a higher temperature (600-degrees-C) shows much longer, multiply faulted defects only above the buried oxide interface which, upon annealing, are eliminated, resulting in a defect density of only 10(5) cm-2. The mechanisms of defect formation and evolution are discussed.

引用

页码：557 / 562

页数：6

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