ELECTRONIC-STRUCTURES OF GAAS-GA1-XALXAS REPEATED MONOLAYER HETEROSTRUCTURE

被引:34
作者
CARUTHERS, E [1 ]
LINCHUNG, PJ [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1103/PhysRevLett.38.1543
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1543 / 1546
页数:4
相关论文
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