LINEAR TIMEBASE WITH A UNIJUNCTION TRANSISTOR

被引：0

|

作者：

SALEM, M

机构：

来源：

WIRELESS WORLD | 1970年 / 76卷 / 1422期

关键词：

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

引用

收藏

页码：580 / &

相关论文

共 50 条

[41] UNIJUNCTION TRANSISTOR RELAXATION-OSCILLATOR AS A SEMIDIGITAL MAGNETIC FLUXMETER
AGRAWAL, SL
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1989, 27 (03) : 115 - 120
[42] A STAIRCASE VOLTAGE GENERATOR CONSTRUCTED FROM UNIJUNCTION TRANSISTOR ANALOGS
OBOD, II
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1980, 34-5 (10) : 124 - 125
[43] PROGRAMMABLE UNIJUNCTION TRANSISTOR PROTECTS OP AMP FROM OVERVOLTAGES.
Thomas, H.
Electronic Design, 1975, 23 (03)
[44] Canard phenomenon in second-order autonomous unijunction transistor circuit
徐云
ChineseScienceBulletin, 1996, (17) : 1478 - 1482
[45] Development of a Nonlinear Model of Unijunction Transistor using Artificial Immune System
Nanda, Satyasai Jagannath
Behera, Sasmita Kumari
Panda, Ganapati
2009 WORLD CONGRESS ON NATURE & BIOLOGICALLY INSPIRED COMPUTING (NABIC 2009), 2009, : 724 - 729
[46] DYNAMIC-RESPONSE OF A UNIJUNCTION TRANSISTOR IN THE PRESENCE OF A MAGNETIC-FIELD
AGRAWAL, SL
SWAMI, R
SENSORS AND ACTUATORS, 1987, 11 (02): : 157 - 172
[47] STAIRCASE VOLTAGE GENERATOR CONSTRUCTED FROM UNIJUNCTION TRANSISTOR ANALOGUES.
Obod, I.I.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1980, 34-35 (10): : 124 - 125
[48] Canard phenomenon in second-order autonomous unijunction transistor circuit
Xu, Y
CHINESE SCIENCE BULLETIN, 1996, 41 (17): : 1478 - 1482
[49] Silicon strain sensitive unijunction transistor with controlling p-n-junction
Babichev, GG
Kozlovskiy, SI
Romanov, VA
Sharan, NN
SENSORS AND ACTUATORS A-PHYSICAL, 2002, 100 (2-3) : 236 - 243
[50] EFFECT OF MAGNETIC-FIELD ON THE ELECTRICAL PARAMETERS OF THE UNIJUNCTION TRANSISTOR WITH THEORETICAL EXPLANATION
RAHMAN, MM
HASSAN, A
IMAMUDDIN, M
ISLAM, SMA
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1987, 25 (5-6) : 231 - 234

← 1 2 3 4 5 →