GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) WITH GRADED EMITTER BARRIER

被引：4

作者：

MATSUMOTO, K ^{[1
]}

HAYASHI, Y ^{[1
]}

NAGATA, T ^{[1
]}

YOSHIMOTO, T ^{[1
]}

机构：

[1] ELECTROTECH LAB, SAKURA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.L1154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1154 / L1156

页数：3

共 50 条

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