GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) WITH GRADED EMITTER BARRIER

被引：4
|
作者：
MATSUMOTO, K [1 ]
HAYASHI, Y [1 ]
NAGATA, T [1 ]
YOSHIMOTO, T [1 ]
机构：
[1] ELECTROTECH LAB, SAKURA, IBARAKI 305, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 06期
关键词：
D O I：
10.1143/JJAP.27.L1154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1154 / L1156
页数：3
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