INITIAL-STAGE OF GROWTH OF HETEROEPITAXIAL LAYERS OF GALLIUM-ARSENIDE ON SAPPHIRE

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作者：

STEPCHEN.OV

CHISTYAK.YD

ANDREEV, VM

GALIKIN, BD

MARKOVA, TI

PECHKINA, LD

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KRISTALLOGRAFIYA | 1974年 / 19卷 / 03期

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暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

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页码：670 / &

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