INITIAL-STAGE OF GROWTH OF HETEROEPITAXIAL LAYERS OF GALLIUM-ARSENIDE ON SAPPHIRE

被引：0
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作者：
STEPCHEN.OV
CHISTYAK.YD
ANDREEV, VM
GALIKIN, BD
MARKOVA, TI
PECHKINA, LD
机构：
来源：
KRISTALLOGRAFIYA | 1974年 / 19卷 / 03期
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D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：670 / &
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