THE STRUCTURE OF SIO2, ITS DEFECTS AND RADIATION HARDNESS

被引：32
|
作者：
DEVINE, RAB
机构：
[1] CNET/CNS France Telecom, Meylan Cedex
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期
关键词：
D O I：
10.1109/23.299784
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review our understanding of the structure of amorphous SiO2 and the role of processing in inducing defect precursors. Five potential sources of positive trapped oxide charge and two of negative trapped charge are described. The most studied of these is the positively charged oxygen-vacancy center. Ionizing radiation is found to be approximately 1000 times less efficient than particle radiation in creating this defect. Various processing induced precursors of the defect and their transformation by radiation are discussed in detail. Macroscopic structural modifications induced by very large radiation doses (10(9) rad) are also discussed. Ionizing radiation is also found to be approximately 1000 times less efficient than particle radiation in inducing these modifications.
引用
收藏
页码：452 / 459
页数：8
相关论文
共 50 条
  • [41] ESR STUDIES ON RADIATION-INDUCED DEFECTS IN HIGH-PRESSURE PHASE SIO2
    OGOH, K
    YAMANAKA, C
    TOYODA, S
    IKEYA, M
    ITO, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4): : 331 - 333
  • [42] CALCULATION OF AVERAGE NUMBER OF RADIATION DEFECTS IN SI AND SIO2 IRRADIATED WTH FAST NEUTRONS
    MYASNIKOV, AA
    POZDNEEV, DB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (05): : 862 - +
  • [43] Effect of SiO2 nanoparticles on the hardness and corrosion resistance of NiW/SiO2 nano composite coating prepared by electrodeposition
    Xijing, Liu
    Yong, Chen
    INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2023, 18 (06):
  • [44] Analysis of the electronic structure of β-SiO2 intrinsic defects based on Density Functional Theory
    Wang, Chongkun
    Guo, Xiaoguang
    Zhang, Shuohua
    Qi, Yongnian
    Gao, Shang
    MATERIALS TODAY COMMUNICATIONS, 2023, 35
  • [45] STRUCTURAL DEFECTS AND CHEMICAL INTERACTION OF IMPLANTED IONS WITH SUBSTRATE STRUCTURE IN AMORPHOUS SIO2
    HOSONO, H
    MATSUNAMI, N
    PHYSICAL REVIEW B, 1993, 48 (18): : 13469 - 13473
  • [46] ATOMIC-STRUCTURE OF SIO2 GLASS AND ITS RESPONSE TO PRESSURE
    STIXRUDE, L
    BUKOWINSKI, MST
    PHYSICAL REVIEW B, 1991, 44 (06): : 2523 - 2534
  • [47] The effect of crystal structure of SiO2 on the wettability of AgCuTi-SiO2f/SiO2 system
    Ma, Q.
    Li, Z. R.
    Niu, H. W.
    Wang, Z. Y.
    Ba, J.
    Qi, J. L.
    Feng, J. C.
    He, P.
    Ma, J.
    VACUUM, 2018, 157 : 124 - 127
  • [48] RADIATION EFFECTS ON THE ADHESION OF NACL TO SIO2
    SOFIELD, CJ
    TREHAN, PN
    SUGDEN, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 24-5 : 531 - 533
  • [49] Radiation effects on the deuterium diffusion in SiO2
    Ibarra, A.
    Munoz-Martin, A.
    Martin, P.
    Climent-Font, A.
    Hodgson, E. R.
    JOURNAL OF NUCLEAR MATERIALS, 2007, 367 (SPEC. ISS.) : 1003 - 1008
  • [50] Ab initio theory of point defects in SiO2
    Pacchioni, G
    DEFECTS IN SIO2 AND RELATED DIELECTRICS: SCIENCE AND TECHNOLOGY, 2000, 2 : 161 - 195
12345