HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES

被引：0
|
作者：
LU, XJ
RHODES, D
PERLMAN, BS
机构：
[1] U.S. Army Research Laboratory, Fort Monmouth
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期
关键词：
D O I：
10.1063/1.355292
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD's high-frequency behavior and device applications.
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收藏
页码：2908 / 2913
页数：6
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