BORON-ION-IMPLANTATION AND FLUORINE-ION-IMPLANTATION INTO ZNSE SINGLE-CRYSTALS

被引:9
|
作者
ADACHI, S [1 ]
MACHI, Y [1 ]
机构
[1] TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
关键词
D O I
10.1143/JJAP.17.135
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:135 / 139
页数:5
相关论文
共 50 条
  • [41] Modification of plastic and brittle properties of InP single crystals by ion implantation
    Inst. of Appl. Physics of Moldavian, Academy of Sciences, Academy str. 5, MD-2028 Chisinau, Moldova
    J. Optoelectron. Adv. Mat., 1 (69-72):
  • [42] Modification of plastic and brittle properties of InP single crystals by ion implantation
    Grabco, DZ
    Palistrant, NA
    Medinskaya, MI
    Pyshnaya, NB
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 1999, 1 (01): : 69 - 72
  • [43] Modification of diamond single crystals by chromium ion implantation with sacrificial layers
    H.-R. Stock
    J. Kohlscheen
    P. Mayr
    Analytical and Bioanalytical Chemistry, 2002, 374 : 1335 - 1337
  • [44] ION-IMPLANTATION AND THERMAL ANNEALING OF SINGLE-CRYSTALS OF THE TYPE-YBA2CU3OX
    MCCALLUM, JC
    WHITE, CW
    BOATNER, LA
    MATERIALS LETTERS, 1988, 6 (11-12) : 374 - 378
  • [45] Fe+ and Zn+ ion implantation in MgO single crystals
    Singh, Jitendra Pal
    Lim, Weon Cheol
    Song, Jonghan
    Lee, Sangsul
    Chae, Keun Hwa
    MATERIALS LETTERS, 2021, 301
  • [46] The effects of fluorine ion implantation on the formation of SIMOX structure
    Zhu, SY
    Lin, CL
    THIN SOLID FILMS, 1997, 298 (1-2) : 147 - 150
  • [47] PLASTIC-DEFORMATION OF VANADIUM SINGLE-CRYSTALS DURING HIGH-DOSE ARSENIC-ION IMPLANTATION
    MEYER, O
    AZZAM, A
    PHYSICAL REVIEW LETTERS, 1984, 52 (18) : 1629 - 1632
  • [48] Study of BF2 ion implantation into crystalline silicon:: Influence of fluorine on boron diffusion
    Ihaddadene-Lecoq, L
    Marcon, J
    Ketata, K
    SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY, 2004, 810 : 351 - 356
  • [49] Current status of single ion implantation
    Shinada, Takahiro
    Kumura, Yoshinori
    Okabe, Jun
    Matsukawa, Takashi
    Ohdomari, Iwao
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (04):
  • [50] Current status of single ion implantation
    Shinada, T
    Kumura, Y
    Okabe, J
    Matsukawa, T
    Ohdomari, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2489 - 2493