共 50 条
- [41] ENERGY OF FORMATION OF METAL VACANCIES IN GALLIUM-ARSENIDE AND INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1344 - 1344
- [42] PHOTO-LUMINESCENCE OF DOPED N-TYPE INDIUM ARSENIDE AND INDIUM-ANTIMONIDE CRYSTALS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02): : K251 - K254
- [43] DISTRIBUTION AND DENSITY OF DISLOCATIONS IN BENT AND ANNEALED CRYSTALS OF GALLIUM ARSENIDE AND INDIUM ANTIMONIDE SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1967, 11 (06): : 760 - &
- [47] POTENTIAL SINGLE-SONDE METHOD OF MEASURING THE INHOMOGENEITY OF INDIUM-ANTIMONIDE AND ARSENIDE INDUSTRIAL LABORATORY, 1979, 45 (04): : 438 - 442
- [48] DETERMINATION OF THE DENSITY OF STATES IN ALLOWED BANDS OF INDIUM-ANTIMONIDE AND LEAD SULFIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 603 - 605
- [49] DIAMAGNETIC EXCITONS AND PARAMETERS OF ENERGY-BANDS OF INDIUM-ANTIMONIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1315 - 1317
- [50] STRUCTURE OF THE TOP OF THE VALENCE BAND OF INDIUM ANTIMONIDE. Soviet physics. Semiconductors, 1980, 14 (09): : 1018 - 1020