STABLE OPERATION OF ALGAAS/GAAS LIGHT-EMITTING-DIODES FABRICATED ON SI SUBSTRATE

被引：15
|
作者：
WADA, N
YOSHIMI, S
SAKAI, S
SHAO, CL
FUKUI, M
机构：
[1] Department of Electrical and Electronic Engineering, Tokushima University, Tokushima, 770, Minami-josanjima
[2] Textile Engineering Institute, Van-tong
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期
关键词：
GAAS ON SI; LED; PHOTOLUMINESCENCE; LIFETIME TEST; OUTPUT POWER; STRESS; DEFECT;
D O I：
10.1143/JJAP.31.L78
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400-degrees-C is reduced to less than 1 x 10(8) dyn/cm2. The output power from the UCGAS LED under a constant current of 800 A/cm2 degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 10(9) dyn/cm2 degrades quickly.
引用
收藏
页码：L78 / L81
页数：4
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