EFFECT OF ANTIMONY-DOPING ON THE OXYGEN SEGREGATION COEFFICIENT IN SILICON CRYSTAL-GROWTH

被引：2
|
作者：
HUANG, XM
TERASHIMA, K
IZUNOME, K
KIMURA, S
机构：
[1] Kimura Metamelt Project, ERATO, JRDC, Tsukuba, Ibaraki, 300-26
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 149卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(94)01013-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The oxygen segregation coefficient was measured as a function of Sb concentration in Sb-doped Si melts. The crystals were grown in a closed quarts ampoule by a normal freezing method. The oxygen segregation coefficient was obtained by comparing the oxygen concentration in the head part of the Si crystal with the oxygen concentration in the initial Si melt. The preliminary results showed that the oxygen segregation coefficient decreased with increasing the Sb concentration. The reduction of the oxygen segregation coefficient due to Sb-doping is considered to result from the existence of Sb2O ordering in the Sb-doped Si melt.
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页码：59 / 63
页数：5
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