GROWTH OF EPITAXIAL PLZT FILM BY CVD

被引：0

作者：

FUNAKUBO, H

IMASHITA, K

MIZUTANI, N

机构：

来源：

NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1991年 / 99卷 / 11期

关键词：

EPITAXIAL PLZT FILM; CVD; COLD-WALL TYPE APPARATUS; PB(DPM)2-LA(DPM)3-ZR(O.T-BU)4-TI(O.I-PR)4-O2 SYSTEM; OPTICAL PROPERTY;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Pb,La) (Zr,Ti)O3 films were prepared by CVD using Pb(DPM)2, La(DPM)3, Zr(O.t-Bu)4, Ti(O.i-Pr)4 and O2 as starting materials. PLZT films were grown with almost complete epitaxy on (100) MgO substrates. The deposition rate of the film was about 50-100 nm/min. Some optical properties were almost the same as those of PLZT ceramics.

引用

页码：1169 / 1171

页数：3

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