EFFECT OF ARSENIC IMPLANTATION ON ELECTRICAL CHARACTERISTICS OF LPCVD WSI2/N-SI SCHOTTKY CONTACTS

被引：3
|
作者：
SHENAI, K [1 ]
机构：
[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 09期
关键词：
D O I：
10.1109/16.83726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical characteristics of As-implanted LPCVD WSi2/n-Si Schottky barriers are reported. It is shown that As implantation results in a significant Schottky-barrier lowering and an increase in the diode ideality factor n. Silicide annealing prior to As implantation is more effective in reducing Schottky-barrier height. Nearly ohmic characteristics were observed for an As implant dose of 5 x 10(15) cm-2.
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页码：2033 / 2035
页数：3
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