EFFECT OF ARSENIC IMPLANTATION ON ELECTRICAL CHARACTERISTICS OF LPCVD WSI2/N-SI SCHOTTKY CONTACTS

被引：3
|
作者：
SHENAI, K [1 ]
机构：
[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 09期
关键词：
D O I：
10.1109/16.83726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical characteristics of As-implanted LPCVD WSi2/n-Si Schottky barriers are reported. It is shown that As implantation results in a significant Schottky-barrier lowering and an increase in the diode ideality factor n. Silicide annealing prior to As implantation is more effective in reducing Schottky-barrier height. Nearly ohmic characteristics were observed for an As implant dose of 5 x 10(15) cm-2.
引用
收藏
页码：2033 / 2035
页数：3
相关论文
共 50 条
  • [1] Characteristics of LPCVD WSi2/n-Si Schottky contacts
    Shenai, Krishna
    Electron device letters, 1991, 12 (04): : 169 - 171
  • [2] CHARACTERISTICS OF LPCVD WISI2/N-SI SCHOTTKY CONTACTS
    SHENAI, K
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (04) : 169 - 171
  • [3] ELECTRICAL CHARACTERISTICS OF ION BOMBARDED NI/N-SI SCHOTTKY CONTACTS
    MYBURG, G
    MALHERBE, JB
    FRIEDLAND, E
    APPLIED SURFACE SCIENCE, 1989, 43 : 242 - 247
  • [4] Electrical characterization of Au/n-ZnO Schottky contacts on n-Si
    Aydogan, S.
    Cinar, K.
    Asil, H.
    Coskun, C.
    Tueruet, A.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 476 (1-2) : 913 - 918
  • [5] The effect of high temperature annealing on Schottky diode characteristics of Au/n-Si contacts
    Nuhoglu, Cigdem
    Gulen, Yasir
    VACUUM, 2010, 84 (06) : 812 - 816
  • [6] Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction
    Zhu, SY
    Detavernier, C
    Van Meirhaeghe, RL
    Cardon, F
    Ru, GP
    Qu, XP
    Li, BZ
    SOLID-STATE ELECTRONICS, 2000, 44 (10) : 1807 - 1818
  • [7] Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes
    Joo, MH
    Lee, KH
    Song, JH
    Im, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 224 - 228
  • [8] Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts
    Jin, LJ
    Pey, KL
    Choi, WK
    Antoniadis, DA
    Fitzgerald, EA
    Chi, DZ
    THIN SOLID FILMS, 2006, 504 (1-2) : 149 - 152
  • [9] Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si
    Ozmentes, Resit
    Temirci, Cabir
    MATERIALS SCIENCE-POLAND, 2020, 38 (03): : 475 - 483
  • [10] Effect of swift heavy ion irradiation on the electrical characteristics of Ag/n-Si Schottky diode
    Singh, R
    Arora, SK
    Singh, JP
    Singh, F
    Kanjilal, D
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2000, 7 (5-6) : 298 - 302
12345