OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE

被引:13
|
作者
KOSCHEL, WH
SMITH, RS
HIESINGER, P
机构
关键词
D O I
10.1149/1.2127631
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1336 / 1339
页数:4
相关论文
共 50 条
  • [31] INVESTIGATION OF RIPPLE DEFECTS ON MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS
    KADHIM, NJ
    MUKHERJEE, D
    MEHTA, M
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (09) : 623 - 625
  • [32] INFLUENCE OF GROWTH-PARAMETERS AND CONDITIONS ON THE OVAL DEFECT DENSITY IN GAAS-LAYERS GROWN BY MBE
    KOPEV, PS
    IVANOV, SV
    YEGOROV, AY
    UGLOV, DY
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 533 - 540
  • [33] GROWTH AND CHARACTERIZATION OF GAAS-LAYERS GROWN ON GE/SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    FUKUDA, Y
    KADOTA, Y
    OHMACHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (04): : 485 - 488
  • [34] Optical and electrical properties of ZnMnO layers grown by peroxide MBE
    Avrutin, V
    Izyumskaya, N
    Özgür, Ü
    El-Shaer, A
    Lee, H
    Schoch, W
    Reuss, F
    Beshenkov, VG
    Pustovit, AN
    Mofor, AC
    Bakin, A
    Morkoç, H
    Waag, A
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (1-4) : 291 - 298
  • [35] LASER-INDUCED DEFECTS IN GAAS-LAYERS
    WESCH, W
    WENDLER, E
    GOTZ, G
    UNGER, K
    ROPPISCHER, H
    RESAGK, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 130 (02): : 539 - 546
  • [36] THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TAKAHASHI, K
    KAWADA, H
    UEDA, S
    FURUSE, M
    SHIRAYONE, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 854 - 857
  • [37] ELIMINATION OF PAIR DEFECTS FROM GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHAI, YG
    PAO, YC
    HIERL, T
    APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1327 - 1329
  • [38] Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE
    Lee, PP
    Hwu, RJ
    Sadwick, LP
    Balasubramaniam, H
    Kumar, BR
    Lai, TC
    Chu, SNG
    Alvis, R
    Lareau, RT
    Wood, MC
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 159 - 162
  • [39] Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE
    Lee, PP
    Hwu, RJ
    Sadwick, LP
    Balasubramaniam, H
    Kumar, BR
    Lai, TC
    Chu, SNG
    Alvis, R
    Lareau, RT
    Wood, MC
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 159 - 162
  • [40] OBSERVATION OF BIAS-DEPENDENT CAPTURE-EMISSION PROCESSES IN MBE-GROWN GAAS-LAYERS
    HSU, WC
    CHANG, CY
    HAU, SS
    WANG, SJ
    SOLID-STATE ELECTRONICS, 1987, 30 (02) : 221 - 226