CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
KARPOV, SY
KOVALCHUK, YV
DELAKRUZ, G
MYACHIN, VE
POGORELSKII, YV
机构：
来源：
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1991年 / 17卷 / 24期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：94 / 98
页数：5
相关论文
共 50 条
  • [41] STUDY OF THE SURFACE-STRUCTURE AND MORPHOLOGY OF GAAS [100] LAYERS, CULTIVATED BY THE MOLECULAR-BEAM EPITAXY METHOD
    DVORYANKINA, GG
    DVORYANKIN, VF
    POROTIKOV, AP
    PETROV, AG
    VARAKSIN, GA
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1984, 48 (09): : 1688 - 1692
  • [42] CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    NANBU, K
    SAITO, J
    ISHIKAWA, T
    KONDO, K
    SHIBATOMI, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 601 - 604
  • [43] DEEP STATES AND SURFACE PROCESSES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    BLOOD, P
    HARRIS, JJ
    JOYCE, BA
    NEAVE, JH
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 351 - 355
  • [44] ATOMIC LAYER EPITAXY GROWTH OF ZNS ON (100) GAAS USING MOLECULAR-BEAM EPITAXY SYSTEM
    TADOKORO, T
    OHTA, S
    ISHIGURO, T
    ICHINOSE, Y
    KOBAYASHI, S
    YAMAMOTO, N
    JOURNAL OF CRYSTAL GROWTH, 1995, 148 (03) : 223 - 231
  • [45] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY
    MASSELINK, WT
    HENDERSON, T
    KLEM, J
    FISCHER, R
    PEARAH, P
    MORKOC, H
    HAFICH, M
    WANG, PD
    ROBINSON, GY
    APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311
  • [46] INVESTIGATION OF INAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATES
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    KUDRYASHOV, AA
    POROTIKOV, AP
    VARAKSIN, GA
    KHUSID, LB
    INORGANIC MATERIALS, 1987, 23 (11) : 1569 - 1574
  • [47] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY
    TAKASUGI, H
    KAWABE, M
    BANDO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L584 - L586
  • [48] SUPPRESSION OF ANTIPHASE DOMAINS IN THE GROWTH OF GAAS ON GE(100) BY MOLECULAR-BEAM EPITAXY
    PUKITE, PR
    COHEN, PI
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 214 - 220
  • [49] ERBIUM DOPING OF GAAS IN MOLECULAR-BEAM EPITAXY
    CHARASSE, MN
    GALTIER, P
    LEMAIRE, F
    HIRTZ, JP
    HUBER, AM
    GRATTEPAIN, C
    LAGORSSE, O
    CHAZELAS, J
    VODJANI, N
    WEISBUCH, C
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 185 - 186
  • [50] MODEL OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY
    HOLLOWAY, S
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 103 - 103
12345