ION-IMPLANTATION IN INFRARED MATERIAL-HGCDTE

被引：0
|
作者：
BUBULAC, LO [1 ]
机构：
[1] ROCKWELL INT CORP,THOUSAND OAKS,CA 91360
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C493 / C493
页数：1
相关论文
共 50 条
  • [41] ION-IMPLANTATION INTO GAAS
    CROSET, M
    ICOLE, J
    PERROCHEAU, J
    REVUE TECHNIQUE THOMSON-CSF, 1980, 12 (04): : 827 - 852
  • [42] ION-IMPLANTATION INTO HOPG
    WEBER, DC
    BRANT, P
    MORAN, MJ
    FISCHER, JE
    PREIL, M
    CARBON, 1982, 20 (02) : 135 - 135
  • [43] ION-IMPLANTATION OF ZNS
    GEORGOBI.AN
    KOTLJARE.MB
    ZLOBIN, VN
    TODUAL, PA
    GENERALO.YP
    DEMENTEV, BP
    MATERIALS RESEARCH BULLETIN, 1973, 8 (08) : 893 - 897
  • [44] ION-IMPLANTATION OF POWDERS
    FREEMAN, JH
    TEMPLE, W
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 28 (1-2): : 85 - 86
  • [45] ION-IMPLANTATION METALLURGY
    HIRVONEN, JK
    JOURNAL OF METALS, 1980, 32 (12): : 50 - 50
  • [46] ION-IMPLANTATION AND SUPERCONDUCTIVITY
    STRITZKER, B
    JOURNAL OF NUCLEAR MATERIALS, 1978, 72 (1-2) : 256 - 262
  • [47] ION-IMPLANTATION IN CHINA
    ZOU, SC
    LIU, XG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 672 - 675
  • [48] ION-IMPLANTATION IN SEMICONDUCTORS
    HOFKER, WK
    POLITIEK, J
    PHILIPS TECHNICAL REVIEW, 1980, 39 (01): : 1 - 14
  • [49] ION-IMPLANTATION IN INSULATORS
    THEVENARD, P
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 64 (1-4): : 117 - 117
  • [50] ION-IMPLANTATION AND LUMINESCENCE
    BRYANT, FJ
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 65 (1-4): : 81 - 93
12345