NUCLEAR MICROANALYSIS STUDY OF THE GROWTH OF THIN DIELECTRIC FILMS ON SILICON BY CLASSICAL AND RAPID THERMAL TREATMENTS

被引：5

作者：

RIGO, S ^{[1
]}

机构：

[1] UNIV PARIS 06,F-75230 PARIS 05,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95432-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The studies carried out by nuclear microanalysis techniques on thin dielectric films grown on silicon by thermal treatments are reviewed. They include films obtained by oxidation or/and nitridation in O2, H2O, or/and NH3, respectively, during classical or rapid thermal treatments. The results thus obtained are discussed and sometimes compared to those obtained by other analysis techniques.

引用

页码：1 / 11

页数：11

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