EFFECTS OF GRAIN-BOUNDARIES ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON SOLAR-CELLS

被引:34
|
作者
NEUGROSCHEL, A
MAZER, JA
机构
关键词
D O I
10.1109/T-ED.1982.20689
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:225 / 236
页数:12
相关论文
共 50 条
  • [41] EBIC ANALYSIS OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    RUTERANA, P
    BARY, A
    NOUET, G
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 27 - 31
  • [42] CHARACTERIZATION OF GRAIN-BOUNDARIES IN SILICON SOLAR-CELLS .2. EVALUATION OF THE DENSITY OF GRAIN-BOUNDARY STATES
    BOHM, M
    SCHEER, HC
    SEIFERT, W
    WAGEMANN, HG
    ARCHIV FUR ELEKTROTECHNIK, 1986, 70 (01): : 1 - 10
  • [43] GRAIN-BOUNDARIES ANALYSIS IN POLYCRYSTALLINE SILICON BY TEM
    KOMNINOU, F
    KARAKOSTAS, T
    BLERIS, GL
    ECONOMOU, NA
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 9 - 14
  • [44] Current-voltage characteristics of grain boundaries in polycrystalline Sr-doped LaGaO3
    Chen, Chien-Ting
    Choi, Kwanghoon
    Kim, Sangtae
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (25) : 9047 - 9049
  • [45] CURRENT-VOLTAGE RESPONSE OF TANDEM JUNCTION SOLAR-CELLS
    POTTER, RR
    SITES, JR
    WAGNER, S
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5269 - 5272
  • [46] LAWS GOVERNING THE FORMATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR-CELLS WITH DISTRIBUTED PARAMETERS
    ARIPOV, KK
    RUMYANTSEV, VD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 227 - 228
  • [47] MAJORITY CARRIER CURRENT CHARACTERISTICS IN LARGE-GRAIN POLYCRYSTALLINE-SILICON-SCHOTTKY-BARRIER SOLAR-CELLS
    YANG, ES
    POON, EK
    WU, CM
    HWANG, W
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1131 - 1135
  • [48] ON THE PHOTOGENERATED CURRENT IN POLYCRYSTALLINE SILICON MIS SOLAR-CELLS
    GOYAL, VK
    PAL, R
    SEN, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (01): : K83 - K87
  • [49] CHARACTERIZATION OF GRAIN-BOUNDARIES OBSERVED IN POLYCRYSTALLINE SILICON FOR SOLAR-CELL APPLICATIONS
    FONTAINE, C
    ROCHER, A
    JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 105 - 110
  • [50] EFFECTS OF CRYSTALLIZATION ON TRAP STATE DENSITIES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    SEKI, S
    KOGURE, O
    TSUJIYAMA, B
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 368 - 370