2-DIMENSIONAL ELECTRON-TRANSPORT IN SELECTIVELY DOPED N-ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES

被引：10
|
作者：
BHATTACHARYYA, K
ORWA, JO
GOODNICK, SM
机构：
[1] Department of Electrical and Computer Engineering, Oregon State University, Corvallis
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.352777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.
引用
收藏
页码：4396 / 4403
页数：8
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