EFFECTS OF INTERFACE-ROUGHNESS SCATTERING ON RESONANT TUNNELING

被引：18
|
作者：
JOHANSSON, P [1 ]
机构：
[1] FAC UNIV NOTRE DAME PAIX,INST STUDIES INTERFACE SCI,B-5000 NAMUR,BELGIUM
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.46.12865
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We calculate the effects of interface-roughness scattering on the current-voltage characteristics of a GaAs-AlxGa1-xAs double-barrier structure. We treat this scattering within the coherent-potential approximation so that the theory is nonperturbative and preserves unitarity. The scattering does not change the peak current significantly, even though the electrons are scattered many times while in the quantum well. The valley current, on the other hand, increases by several orders of magnitude in a structure with thick barriers. In good qualitative agreement with recent experiments we find that the peak-to-valley ratio grows only very slowly with barrier thickness for barriers thicker than almost-equal-to 100 angstrom.
引用
收藏
页码：12865 / 12868
页数：4
相关论文
共 50 条
  • [21] INTERFACE ROUGHNESS AND ASYMMETRIC CURRENT VOLTAGE CHARACTERISTICS IN RESONANT TUNNELING
    RUDBERG, BGR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) : 600 - 603
  • [22] Effects of interface-roughness scattering on nonlinear electron transport in a superlattice based on exact solution of generalized Boltzmann transport equation
    Shih, Po-Hsin
    Huang, Danhong
    Gumbs, Godfrey
    Do, Thi-Nga
    Morath, Christian P.
    Maestas, Diana
    PHYSICAL REVIEW B, 2023, 108 (16)
  • [23] Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes
    Wang, SJ
    Lin, JC
    Liou, WR
    Yeh, ML
    Luo, YC
    Cheng, CY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3858 - 3862
  • [24] Effects of interface-roughness scattering on nonlinear electron transport in a superlattice based on exact solution of generalized Boltzmann transport equation
    Shih, Po-Hsin
    Huang, Danhong
    Gumbs, Godfrey
    Do, Thi-Nga
    Morath, Christian P.
    Maestas, T. Diana
    PHYSICAL REVIEW B, 2023, 108 (06)
  • [25] Effects of resonant interface states on tunneling magnetoresistance
    Wunnicke, O
    Papanikolaou, N
    Zeller, R
    Dederichs, PH
    Drchal, V
    Kudrnovsky, J
    PHYSICAL REVIEW B, 2002, 65 (06) : 1 - 6
  • [26] Controlling interplay between weak localization and interface-roughness scattering of electrons in nonlinear transport within a superlattice
    Shih, Po-Hsin
    Huang, Danhong
    Gumbs, Godfrey
    Do, Thi-Nga
    Morath, Christian P.
    Maestas, Diana
    PHYSICAL REVIEW B, 2024, 110 (08)
  • [27] Roughness on resonant tunneling characteristics
    Shinohara, M
    Yokoyama, H
    Wada, K
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 400 - 403
  • [28] Interface-roughness parameters in InAs quantum wells determined from mobility
    Gold, A.
    Journal of Applied Physics, 2008, 103 (04):
  • [29] Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes
    Li, J
    Mirabedini, A
    Mawst, LJ
    Savage, DE
    Matyi, RJ
    Kuech, TF
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 617 - 623
  • [30] Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode
    Lake, R
    Klimeck, G
    Bowen, RC
    Fernando, C
    Moise, T
    Kao, YC
    SUPERLATTICES AND MICROSTRUCTURES, 1996, 20 (03) : 279 - 285
12345