HREM STUDY OF GAAS-LAYERS GROWN ON GE BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE

被引：0

作者：

GUELTON, N ^{[1
]}

FEUILLET, G ^{[1
]}

SAINTJACQUES, RG ^{[1
]}

DODELET, JP ^{[1
]}

机构：

[1] CEN,DRF,SPH,PSC,F-38041 GRENOBLE,FRANCE

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of operating conditions on the microstructure of GaAs grown on Ge substrates by close-spaced vapor transport have been investigated by conventional and high resolution electron microscopy. High quality single domain layers were obtained by a pre-growth thermal treatment of Ge vicinal substrates in H-2 prior to growth.

引用

页码：365 / 368

页数：4

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