EPITAXIAL EFFICIENCY COEFFICIENT FOR GROWTH FROM LIQUID-PHASE

被引：0

作者：

KORDOS, P ^{[1
]}

机构：

[1] SLOVAK ACAD SCI, ELECTROTECH INST, BRATISLAVA, CZECHOSLOVAKIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1973年 / 20卷 / 04期

关键词：

D O I：

10.1016/0022-0248(73)90096-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：307 / 309

页数：3

共 50 条

[21] LIQUID-PHASE EPITAXIAL-GROWTH OF CUINS2
CHANG, LW
GONG, J
SUN, CY
HWANG, HL
THIN SOLID FILMS, 1986, 144 (02) : 229 - 239
[22] NEW TECHNIQUE FOR TERMINATING LIQUID-PHASE EPITAXIAL-GROWTH
POTEMSKI, RM
WOODALL, JM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) : 277 - &
[23] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LIQUID-PHASE ELECTROEPITAXY
YANG, XF
HUANG, L
GATOS, HC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 194 - 197
[24] LIQUID-PHASE EPITAXIAL-GROWTH OF ZNSE ON ZNTE SUBSTRATE
NAKAMURA, H
SUN, LY
ASANO, A
NAKAMURA, Y
WASHIYAMA, M
AOKI, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03): : 499 - 503
[25] LIQUID-PHASE EPITAXIAL-GROWTH ON (111)IN PLANES OF INP
LOGAN, RA
HENRY, CH
MERRITT, FR
MAHAJAN, S
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5462 - 5463
[26] LIQUID-PHASE EPITAXIAL-GROWTH OF BURIED HETEROSTRUCTURE DEVICES
LOGAN, RA
JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) : 233 - 237
[27] LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FOR MICROWAVE APPLICATIONS
ROSZTOCZY, FE
KINOSHIT.J
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : C235 - +
[28] LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS
GROVES, SH
PLONKO, MC
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 81 - 87
[29] IMPROVEMENT OF THE PROCESSES OF LIQUID-PHASE EPITAXIAL GROWTH OF NANOHETEROEPITAXIAL STRUCTURES
Maronchuk, I. I.
Sanikovich, D. D.
Potapkov, P., V
Vel'chenko, A. A.
JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS, 2018, 91 (02) : 491 - 497
[30] LIQUID-PHASE EPITAXIAL-GROWTH OF SILICON IN SELECTED AREAS
KIM, HJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1394 - &

← 1 2 3 4 5 →