BREAKDOWN VOLTAGE OF HIGH-VOLTAGE BIPOLAR-TRANSISTORS

被引：3
|
作者：
HASSAN, MMS
CHOWDHURY, GR
ALAM, MZ
机构：
[1] Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 10期
关键词：
D O I：
10.1016/0038-1101(91)90107-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An empirical expression for open-base bulk breakdown voltage of an epitaxial n+pn-n+ bipolar transistor as a function of collector doping density and common-emitter current gain is useful in the design of the collector region of the transistor. In this paper, analytic expressions for optimal collector doping density and epitaxial layer thickness of high-voltage transistors with a lightly-doped collector are obtained as a function of breakdown voltage subject to a minimum collector resistance. A relation between open-base and open-emitter bulk breakdown voltages is also established in this paper.
引用
收藏
页码：1109 / 1111
页数：3
相关论文
共 50 条
  • [21] EARLY VOLTAGE IN VERY-NARROW-BASE BIPOLAR-TRANSISTORS
    ROULSTON, DJ
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) : 88 - 89
  • [22] VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS
    WANG, KC
    ASBECK, PM
    MILLER, DL
    EISEN, FH
    ELECTRONICS LETTERS, 1985, 21 (18) : 807 - 808
  • [23] INTEGRATED ANALOG VOLTAGE MULTIPLIER COMBINING MOS AND BIPOLAR-TRANSISTORS
    BRATT, AH
    KING, D
    LYSEJKO, MJ
    ELECTRONICS LETTERS, 1991, 27 (20) : 1853 - 1855
  • [24] TRADEOFF BETWEEN THRESHOLD VOLTAGE AND BREAKDOWN IN HIGH-VOLTAGE DOUBLE-DIFFUSED MOS-TRANSISTORS
    POCHA, MD
    PLUMMER, JD
    MEINDL, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1325 - 1327
  • [25] HIGH-CURRENT GAIN, LOW OFFSET VOLTAGE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS
    CHEN, HR
    CHANG, CY
    LEE, CP
    HUANG, CH
    TSANG, JS
    TSAI, KL
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) : 336 - 338
  • [26] HIGH-VOLTAGE STATIC BREAKDOWN IN VACUUM
    WATSON, A
    CANADIAN JOURNAL OF PHYSICS, 1976, 54 (02) : 142 - 157
  • [27] High voltage heterojunction bipolar transistors
    Hussain, T
    Sokolich, M
    Montes, M
    Brand, M
    COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII), 2000, 2000 (01): : 120 - 127
  • [28] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS
    HAHN, LA
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1384 - &
  • [29] Characteristics of AC breakdown voltage of high-voltage ceramic condensers
    Akagami, Hideo, 1600, (110):
  • [30] BREAKDOWN VOLTAGE OF HIGH-VOLTAGE GAAS SCHOTTKY DIODES - COMMENT
    HORVATH, ZJ
    SOLID-STATE ELECTRONICS, 1995, 38 (10) : 1835 - 1836
12345