HIGH-TEMPERATURE TRANSPORT PROPERTIES OF N-TYPE GAAS

被引:16
|
作者
IKOMA, H
机构
关键词
D O I
10.1143/JPSJ.28.1474
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1474 / &
相关论文
共 50 条
  • [31] TEMPERATURE DEPENDENCE OF CARRIER LIFETIME IN N-TYPE GAAS
    KOLCHANO.NM
    NASLEDOV, DN
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 876 - +
  • [32] Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides
    Mori, T.
    JOM, 2016, 68 (10) : 2673 - 2679
  • [33] OHMIC CONTACTS TO N-TYPE GAAS USING HIGH-TEMPERATURE RAPID THERMAL ANNEALING FOR SELF-ALIGNED PROCESSING
    CHEN, CL
    MAHONEY, LJ
    WOODHOUSE, JD
    FINN, MC
    NITISHIN, PM
    APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1179 - 1181
  • [34] Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides
    T. Mori
    JOM, 2016, 68 : 2673 - 2679
  • [35] Spin diffusion/transport in n-type GaAs quantum wells
    Cheng, J. L.
    Wu, M. W.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [36] DEEP LEVELS IN N-TYPE SI INTRODUCED BY HIGH-TEMPERATURE GAS ETCHING
    OMELYANOVSKAYA, NM
    ITALYANTSEV, AG
    KRASNOBAEV, LY
    MORDKOVICH, VN
    ASTAKHOVA, EF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 932 - 934
  • [37] Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications
    Kriz, J
    Gottfried, K
    Scholz, T
    Kaufmann, C
    Gessner, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 180 - 185
  • [38] FORMATION AND PROPERTIES OF AN IMPURITY BAND IN N-TYPE GAAS
    EMELYANE.OV
    LAGUNOVA, TS
    NASLEDOV, DN
    TALALAKI.GN
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (05): : 1063 - +
  • [39] ELECTRICAL PROPERTIES OF EPITAXIAL FILMS OF N-TYPE GAAS
    DVORYANKIN, VF
    TELEGIN, AA
    NEDEOGLO, DD
    NASLEDOV, DN
    EMELYANE.OV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1636 - +
  • [40] Electrical transport properties of n-type GaN
    Ari, M.
    Metin, H.
    Dagdemir, Y.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2009, 3 (08): : 763 - 770