MULTIWAFER GROWTH OF HIGHLY UNIFORM AND HIGH-QUALITY ALGAINP/CAINP STRUCTURE USING HIGH-SPEED ROTATING-DISK METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Multi-wafer growth of highly uniform and high-quality AlGaInP/GaInP using a high-speed rotating disk metalorganic chemical vapor deposition (MOCVD) has been successfully realized by suppressing In desorption and oxygen contamination at high growth temperature around 700 degrees C. The suppression of In desorption during high-temperature growth is achieved by an increase of the effective gas now rate resulting from increasing disk rotational speed and reducing growth pressure. The layer thickness uniformity of both undoped GaInP and Zn-doped (Al0.7Ga0.3)(0.5)In0.5P layers is controlled within +/-5% over a 3-inch diameter wafer. The composition uniformity of undoped GaInP layer estimated form X-ray rocking curve is controlled within +/-2% over the 3-inch diameter wafer. The oxygen concentration in the (Al0.7Ga0.3)(0.5)In0.5P layers is substantially reduced to below 2x10(16) cm(-3). Excellent performance, uniformity and reliability of AlGaInP/GaInP double quantum well laser diodes are also obtained from the 3-inch diameter wafer prepared by multi-wafer growth.