PITS AND HILLOCKS ON EPITAXIAL GAAS GROWN FROM VAPOR PHASE

被引：18
|
作者：
MINDEN, HT
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1971年 / 8卷 / 01期
关键词：
D O I：
10.1016/0022-0248(71)90020-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：37 / &
相关论文
共 50 条
  • [41] Structural and optical properties of organometallic vapor phase epitaxial grown CdSe epilayers on (001) InP and (001) GaAs substrates
    Zhang, XB
    Hark, SK
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 373 - 378
  • [42] X-RAY STUDIES OF TWINNED GAAS BLADES GROWN FROM THE VAPOR PHASE
    MONCHAMP, RR
    MCALEER, WJ
    POLLAK, PI
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : C207 - C207
  • [43] X-RAY STUDIES OF TWINNED GAAS BLADES GROWN FROM THE VAPOR PHASE
    MONCHAMP, RR
    MCALEER, WJ
    POLLAK, PI
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1108 - 1109
  • [44] IMPERFECTIONS IN VAPOR-PHASE EPITAXIAL GAAS REVEALED BY SIRTLE ETCHANT
    SOROKIN, IN
    KLEBANOVA, NA
    KOZEIKIN, BV
    NOSIKOV, SV
    TERENTEVA, GN
    INORGANIC MATERIALS, 1987, 23 (11) : 1566 - 1568
  • [45] VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS
    TENG, SJJ
    BALLINGALL, JM
    ROSENBAUM, FJ
    APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1217 - 1219
  • [46] NEW METHODS OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
    SEKI, H
    KOOKITU, A
    OHTA, K
    FUJIMOTO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 11 - 17
  • [47] UNIFORM DEPOSITION OF GAAS IN A MULTIWAFER VAPOR-PHASE EPITAXIAL SYSTEM
    LAU, KM
    DAT, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1086 - 1089
  • [48] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP/GAAS
    KNAUER, A
    ERBERT, G
    GRAMLICH, S
    OSTER, A
    RICHTER, E
    ZEIMER, U
    WEYERS, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1655 - 1658
  • [49] Vapor phase epitaxial liftoff of GaAs and silicon single crystal films
    Chang, W
    Kao, CP
    Pike, GA
    Slone, JA
    Yablonovitch, E
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 58 (02) : 141 - 146
  • [50] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE
    IHARA, M
    DAZAI, K
    RYUZAN, O
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 528 - 531
12345