H2O2-HF-C4O6H6 (TARTARIC ACID)H2O ETCHING SYSTEM FOR CHEMICAL POLISHING OF GASB

被引：21

作者：

BERISHEV, IE ^{[1
]}

DEANDA, F ^{[1
]}

MISHOURNYI, VA ^{[1
]}

OLVERA, J ^{[1
]}

ILYINSKAYA, ND ^{[1
]}

VASILYEV, VI ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 10期

关键词：

D O I：

10.1149/1.2050040

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We present the results of a study of H2O2:HF:C4O6H6 (tartaric acid):H2O solution for chemical polishing of GaSb wafers. The influence of etching solution composition on surface morphology was studied. The solutions investigated varied in H2O2 (2.0-3.0 mol) and HF (0.0-5.0 mol) concentrations, but contained a constant concentration of tartaric acid (0.7 mol). it was found that the etchant has excellent polishing properties for GaSb wafers when the HF concentration was less than 1.5 mol. For HF concentration larger than 1.5, the etchant solution produced rough surfaces. The dependencies of the etching rate on solution composition, temperature, and etching time were studied.

引用

页码：L189 / L191

页数：3

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