POLYANILINE AS A TRANSPARENT ELECTRODE FOR POLYMER LIGHT-EMITTING-DIODES - LOWER OPERATING VOLTAGE AND HIGHER EFFICIENCY

被引:396
|
作者
YANG, Y
HEEGER, AJ
机构
[1] UNIAX Corporation, Santa Barbara, CA 93111
关键词
D O I
10.1063/1.110853
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that by using polyaniline (PANI) or a combination of (PANI) and indium/tin oxide (ITO) as the transparent anode of a polymer light-emitting diode with poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylene vinylene] (MEH-PPV), as the active layer, device performance can be significantly improved, The operating voltage can be reduced by approximately 30%-50% and the quantum efficiency can be increased by approximately 30%-40% with respect to the devices using ITO alone as the hole-injecting anode. The barrier height at the PANI/MEH-PPV interface is estimated to be approximately 0.08-0.12 eV, approximately half of that at the ITO/MEH-PPV interface.
引用
收藏
页码:1245 / 1247
页数:3
相关论文
共 50 条
  • [31] PROPOSED METHOD FOR INCREASING EFFICIENCY IN LASER AND LIGHT-EMITTING-DIODES
    JAIN, FC
    MELEHY, MA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (04): : 591 - 591
  • [32] ENHANCED PERFORMANCE OF POLYMER LIGHT-EMITTING-DIODES USING HIGH-SURFACE-AREA POLYANILINE NETWORK ELECTRODES
    YANG, Y
    WESTERWEELE, E
    ZHANG, C
    SMITH, P
    HEEGER, AJ
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 694 - 698
  • [33] FABRICATION OF POLYMER LIGHT-EMITTING-DIODES USING DOPED SILICON ELECTRODES
    PARKER, ID
    KIM, HH
    APPLIED PHYSICS LETTERS, 1994, 64 (14) : 1774 - 1776
  • [34] HIGH-EFFICIENCY INGAALP/GAAS VISIBLE LIGHT-EMITTING-DIODES
    SUGAWARA, H
    ISHIKAWA, M
    HATAKOSHI, G
    APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1010 - 1012
  • [35] HIGH-EFFICIENCY GAINPAS-INP LIGHT-EMITTING-DIODES
    DOLGINOV, LM
    DRAKIN, AE
    ELISEEV, PG
    KOVALYOV, VP
    MILVIDSKY, MG
    ORLOV, VP
    PANTELEEV, YK
    SVERDLOV, BN
    TSIMBEROVA, IS
    SHEVCHENKO, EG
    KVANTOVAYA ELEKTRONIKA, 1978, 5 (11): : 2488 - 2489
  • [36] HOLE-TRANSPORTING COMPOUNDS FOR MULTILAYER POLYMER LIGHT-EMITTING-DIODES
    KRAFT, A
    BURN, PL
    HOLMES, AB
    BRADLEY, DDC
    FRIEND, RH
    MARTENS, JHF
    SYNTHETIC METALS, 1993, 57 (01) : 4163 - 4167
  • [37] HIGH-EFFICIENCY INGAP LIGHT-EMITTING-DIODES ON GAP SUBSTRATES
    STINSON, LJ
    YU, JG
    LESTER, SD
    PEANASKY, MJ
    PARK, K
    APPLIED PHYSICS LETTERS, 1991, 58 (18) : 2012 - 2014
  • [38] EXTERNAL QUANTUM EFFICIENCY OF GAAS-SI LIGHT-EMITTING-DIODES
    KOROLEV, VL
    ROSSIN, VV
    SIDOROV, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 327 - 328
  • [39] Ohmic Contact Characteristics of AlGaN-based Deep-ultraviolet Light-emitting-diodes with NiAu Transparent Electrode
    Wang X.
    Liu N.
    Wang B.
    Guo Y.
    Zhang X.
    Guo K.
    Li Y.
    Zhang T.
    Yan J.
    Li J.
    Faguang Xuebao/Chinese Journal of Luminescence, 2023, 44 (05): : 898 - 903
  • [40] GENERATION OF SUB-POISSONIAN LIGHT BY HIGH-EFFICIENCY LIGHT-EMITTING-DIODES
    TAPSTER, PR
    RARITY, JG
    SATCHELL, JS
    EUROPHYSICS LETTERS, 1987, 4 (03): : 293 - 299