GROWTH-KINETICS OF VICINAL SURFACES OF HE-4 CRYSTALS
被引:12
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作者:
ANDREEVA, OA
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ANDREEVA, OA
KESHISHEV, KO
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KESHISHEV, KO
KOGAN, AB
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KOGAN, AB
MARCHENKOV, AN
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MARCHENKOV, AN
机构:
来源:
EUROPHYSICS LETTERS
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1992年
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19卷
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08期
关键词:
PHYSICS OF CRYSTAL GROWTH;
SOLID HELIUM AND RELATED QUANTUM CRYSTALS;
SOLID-FLUID INTERFACE PROCESSES;
D O I:
10.1209/0295-5075/19/8/004
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
The temperature dependence of the growth coefficient in the angular vicinity of the basal [0001] facet of hcp He-4 crystals has been measured in the temperature range from 0.35 K to 0.45 K. Contrary to theoretical predictions this dependence turned out to be much stronger for vicinal surfaces than for nonvicinal orientations. For vicinal surfaces experimental data can be approximated by both K is-proportional-to T-5 and K is-proportional-to exp [epsilon/T] dependences, where epsilon = 1.9 K.