SILICON OXYNITRIDE STUDY BY THE TETRAHEDRON MODEL AND BY SPECTROSCOPIC ELLIPSOMETRY

被引：10
|
作者：
SASSELLA, A
LUCARNO, P
BORGHESI, A
CORNI, F
ROJAS, S
ZANOTTI, L
机构：
[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[2] SGS THOMSON MICROELECTR,I-20041 AGRATE BRIANZA,ITALY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00170-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon oxynitride samples deposited by plasma-enhanced chemical vapour deposition are characterized by different techniques to obtain their stoichiometry and density. From these data and applying the tetrahedron model, the optical functions in the range from 0.23 to 0.90 mu m are calculated and compared with the results of spectroscopic ellipsometry.
引用
收藏
页码：395 / 402
页数：8
相关论文
共 50 条
  • [41] Characterization of epitaxial silicon germanium thin films by spectroscopic ellipsometry
    Ygartua, Carlos
    Liaw, Ming
    Thin Solid Films, 1998, 313-314 (1-2): : 237 - 242
  • [42] Spectroscopic ellipsometry characterization of hydrogenated amorphous silicon thin film
    He, Jian
    Li, Wei
    Xu, Rui
    Guo, Anran
    Qi, Kangcheng
    Jiang, Yadong
    Guangxue Xuebao/Acta Optica Sinica, 2013, 33 (10):
  • [43] Cavities in helium implanted and annealed silicon characterized by spectroscopic ellipsometry
    Fukarek, W
    Kaschny, JR
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4160 - 4165
  • [44] Characterization of interface layer of silicon on sapphire using spectroscopic ellipsometry
    Jayatissa, AH
    Yamaguchi, T
    Sawada, K
    Aoyama, M
    Sato, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12A): : 7152 - 7155
  • [45] Spectroscopic Ellipsometry characterization of thin films deposited on silicon substrate
    Benzitouni, S.
    Mahdjoub, A.
    Zaabat, M.
    JOURNAL OF NEW TECHNOLOGY AND MATERIALS, 2014, 4 (01) : 138 - 142
  • [46] Characterization of epitaxial silicon germanium thin films by spectroscopic ellipsometry
    Ygartua, C
    Liaw, M
    THIN SOLID FILMS, 1998, 313 : 237 - 242
  • [47] Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films
    Price, J.
    Diebold, A. C.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2156 - 2159
  • [48] Microcrystalline silicon thin films studied using spectroscopic ellipsometry
    Kang, TD
    Lee, H
    Park, SJ
    Jang, J
    Lee, S
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) : 2467 - 2474
  • [49] Characterization of interface layer of silicon on sapphire using spectroscopic ellipsometry
    Jayatissa, Ahalapitiya Hewage
    Yamaguchi, Tomuo
    Sawada, Kazuaki
    Aoyama, Mitsuru
    Sato, Fumio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (12 A): : 7152 - 7155
  • [50] Silicon radicals in silicon oxynitride: A theoretical ESR study
    Crosby, Lonnie D.
    Kurtz, Henry A.
    JOURNAL OF PHYSICAL CHEMISTRY A, 2006, 110 (28): : 8637 - 8644
12345