ELECTRONIC CONDUCTIVITY AND CHEMICAL DIFFUSION-COEFFICIENT OF CADMIUM-DOPED CUPROUS IODIDE

The electronic (hole) conductivity and chemical diffusion coefficient for pure and cadmium-doped CuI were measured both as a function of temperature and cadmium content. The conductivity results are interpreted taking into account the explicit temperature dependence of the hole mobility, which was obtained from earlier measurements of Vine and Maurer. The chemical diffusion coefficient (D approximately) data are explained by the assumption of a trapping process of the electronic defects by cadmium ions occupying normal copper sites.