A STUDY OF TITANIUM SILICIDE FORMATION BY MULTIPLE ARSENIC-ION-IMPLANTATION

被引：0
|
作者：
CHEN, PC [1 ]
LIN, JY [1 ]
HWANG, HL [1 ]
机构：
[1] CHUNG CHENG INST TECHNOL, DEPT ELECT ENGN, TAOYUAN 335, TAIWAN
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 05期
关键词：
D O I：
10.1016/0038-1101(93)90238-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of arsenic distribution on silicide formation was investigated by using ''multiple arsenic-ion-implantation'' to modulate the arsenic profiles. The use of different As distributions plus annealing at different temperatures permits a clear insight into the mechanism of retarded titanium silicide formation.
引用
收藏
页码：705 / 709
页数：5
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