EPITAXIAL-GROWTH OF 6H SIC IN TEMPERATURE-RANGE 1320-1390 DEGREES C

被引：18

作者：

POWELL, JA ^{[1
]}

WILL, HA ^{[1
]}

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 11期

关键词：

D O I：

10.1063/1.1662116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5177 / 5178

页数：2

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