EPITAXIAL-GROWTH OF 6H SIC IN TEMPERATURE-RANGE 1320-1390 DEGREES C

被引：18
|
作者：
POWELL, JA [1 ]
WILL, HA [1 ]
机构：
[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135
来源：
JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 11期
关键词：
D O I：
10.1063/1.1662116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5177 / 5178
页数：2
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