GROWTH OF ZNSE FILMS ON GAAS BY IONIZED CLUSTER BEAM EPITAXY

被引：6
|
作者：
FENG, JY
ZHANG, FW
XU, SY
ZHENG, Y
FAN, YD
机构：
[1] Department of Materials Science and Engineering, Tsinghua University
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 142卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/0022-0248(94)90270-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Growth of ZnSe single crystal films on GaAs(100) was realized by ionized cluster beam epitaxy (ICBE). With a single evaporizing source of ZnSe, the epilayer of ZnSe was identified to be stoichiometric. Streaky reflective high energy electron diffraction (RHEED) showed the fine crystallinity and surface flatness of the epitaxial ZnSe films. The crystallographic quality of ZnSe films was further evaluated by X-ray diffraction. The minimum full width at half maximum (FWHM) of ZnSe epilayers was determined to be 133 arc sec. The dependence of the FWHM on substrate temperature and acceleration voltage was also studied.
引用
收藏
页码：68 / 72
页数：5
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