DETERMINING BAND OFFSETS WITH TRIPLE QUANTUM-WELL STRUCTURES

被引：11
|
作者：
BRYANT, GW
BRADSHAW, JL
LEAVITT, RP
TOBIN, MS
PHAM, JT
机构：
[1] Microphotonic Devices Branch, U. S. Army Research Laboratory, Adelphi
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期
关键词：
D O I：
10.1063/1.109676
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Coupled triple quantum-well GaAs/AlGaAs heterostructures have been designed to exhibit simultaneous electron and hole tunneling from the central well to opposite side wells at a fixed applied bias. Band offset is the critical parameter for the design of structures with simultaneous resonances. Photocurrent measurements reveal which triple quantum-well structures exhibit simultaneous resonances. A band offset ratio near 62:38 is required to correctly engineer structures with simultaneous resonances.
引用
收藏
页码：1357 / 1359
页数：3
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