DETERMINING BAND OFFSETS WITH TRIPLE QUANTUM-WELL STRUCTURES

被引:11
|
作者
BRYANT, GW
BRADSHAW, JL
LEAVITT, RP
TOBIN, MS
PHAM, JT
机构
[1] Microphotonic Devices Branch, U. S. Army Research Laboratory, Adelphi
关键词
D O I
10.1063/1.109676
中图分类号
O59 [应用物理学];
学科分类号
摘要
Coupled triple quantum-well GaAs/AlGaAs heterostructures have been designed to exhibit simultaneous electron and hole tunneling from the central well to opposite side wells at a fixed applied bias. Band offset is the critical parameter for the design of structures with simultaneous resonances. Photocurrent measurements reveal which triple quantum-well structures exhibit simultaneous resonances. A band offset ratio near 62:38 is required to correctly engineer structures with simultaneous resonances.
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收藏
页码:1357 / 1359
页数:3
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